IGBT - IXDN55N120D1 HIGH VOLTAGE IGBT WITE OPTIONAL DIODE
Brand: GERMANY
Group: Semiconductor
Subgroup: IGBT
Model / Brand: IXYS
Stock: Please Call.
قیمت: 3,000,000 Tomman
Keywords: IXDN55N120D1 ای جی بی تی _ای جی بی تی مینی بلوک _IXYS IXYS IXYS IXYS IXDN IXDN55 IXDN55N IXDN55N120 IXDN55N120 IXDN55N120D1---ای ایکس وای اس المان _ای جی بی تی _IGBT _IGBT _IGBT _IGBT
Detail:
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 1200V
Collector-emitter saturation voltage |Ucesat|, V:
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 85A
Maximum junction temperature (Tj), °C: 150
Rise time, nS: 0
Maximum collector capacity (Cc), pF:
Package: ISOTOP